• DocumentCode
    1318479
  • Title

    Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 μm at room temperature

  • Author

    Baranov, A.N. ; Cuminal, Y. ; Boissier, G. ; Alibert, C. ; Joullié, A.

  • Author_Institution
    Centre d´´Electron. et de Micro-optoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    32
  • Issue
    24
  • fYear
    1996
  • fDate
    11/21/1996 12:00:00 AM
  • Firstpage
    2279
  • Lastpage
    2280
  • Abstract
    Laser diodes emitting at 2.36 μm at room temperature have been fabricated from a type-II quantum-well heterostructure with an active region consisting of five Ga0.65In0.35As0.15 Sb0.85 wells and GaSb barriers. A pulsed threshold current density of 305 Å/cm2 has been obtained for an 820 μm-long-device at 23°C. The characteristic temperature T0 was found to be 55 K between -30 and 50°C. The differential quantum efficiency being 35% for 600 μm long lasers
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; 2.36 micron; 35 percent; 600 to 820 micron; Ga0.65In0.35As0.15Sb0.85 -GaSb; GaInAsSb/GaSb quantum-wells; GaSb barriers; low-threshold laser diodes; pulsed threshold current density; type-II quantum-well heterostructure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961496
  • Filename
    556815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318479