• DocumentCode
    1318490
  • Title

    High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

  • Author

    Twynam, J.K. ; Sato, Hikaru

  • Author_Institution
    Central Res. Labs., Sharp Corp., Nara, Japan
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    High-performance HBTs with a carbon-doped base layer (p=4*1019 cm-3) are reported. The use of carbon as a p-type dopant allows the emitter-base p-n junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains hFE=50 and fT and fmax values of 42 GHz and 117 GHz, respectively, are reported.
  • Keywords
    III-V semiconductors; aluminium compounds; carbon; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; solid-state microwave devices; vapour phase epitaxial growth; 117 GHz; 42 GHz; AlGaAs-GaAs:C; C doped base layer; MOCVD growth; emitter-base p-n junction; heterojunction bipolar transistor; microwave HBT; p-type dopant; wafer epitaxial structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910092
  • Filename
    83168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318490