Title :
High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD
Author :
Twynam, J.K. ; Sato, Hikaru
Author_Institution :
Central Res. Labs., Sharp Corp., Nara, Japan
Abstract :
High-performance HBTs with a carbon-doped base layer (p=4*1019 cm-3) are reported. The use of carbon as a p-type dopant allows the emitter-base p-n junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains hFE=50 and fT and fmax values of 42 GHz and 117 GHz, respectively, are reported.
Keywords :
III-V semiconductors; aluminium compounds; carbon; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; solid-state microwave devices; vapour phase epitaxial growth; 117 GHz; 42 GHz; AlGaAs-GaAs:C; C doped base layer; MOCVD growth; emitter-base p-n junction; heterojunction bipolar transistor; microwave HBT; p-type dopant; wafer epitaxial structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910092
