• DocumentCode
    1318593
  • Title

    Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates

  • Author

    Gombia, E. ; Mosca, R. ; Motta, A. ; Chaabane, H. ; Bosacchi, A. ; Franchi, S.

  • Author_Institution
    Istituto MASPEC, CNR, Parma, Italy
  • Volume
    32
  • Issue
    24
  • fYear
    1996
  • fDate
    11/21/1996 12:00:00 AM
  • Firstpage
    2283
  • Lastpage
    2285
  • Abstract
    Al Schottky barriers have been prepared on n-In0.35Ga 0.65As/buffer/GaAs structures using InxGa1-x As buffers with different grading laws to reduce the defect density induced by lattice mismatch in the active In0.35Ga 0.65As layer. Counter doped p- cap layers have been used to enhance the barriers. Using suitable cap and buffer parameters, barrier heights up to 0.67 eV and ideality factors of 1.15 have been obtained
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium; electrical contacts; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor-metal boundaries; 0.67 eV; Al Schottky barriers; Al-In0.35Ga0.65As-GaAs; GaAs; GaAs substrates; InxGa1-xAs buffers; counter doped p- cap layers; n-InGaAs/buffer/GaAs structures; n-type InGaAs epitaxial layers; quasi-Schottky contacts;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961523
  • Filename
    556818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318593