Title :
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates
Author :
Gombia, E. ; Mosca, R. ; Motta, A. ; Chaabane, H. ; Bosacchi, A. ; Franchi, S.
Author_Institution :
Istituto MASPEC, CNR, Parma, Italy
fDate :
11/21/1996 12:00:00 AM
Abstract :
Al Schottky barriers have been prepared on n-In0.35Ga 0.65As/buffer/GaAs structures using InxGa1-x As buffers with different grading laws to reduce the defect density induced by lattice mismatch in the active In0.35Ga 0.65As layer. Counter doped p- cap layers have been used to enhance the barriers. Using suitable cap and buffer parameters, barrier heights up to 0.67 eV and ideality factors of 1.15 have been obtained
Keywords :
III-V semiconductors; Schottky barriers; aluminium; electrical contacts; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor-metal boundaries; 0.67 eV; Al Schottky barriers; Al-In0.35Ga0.65As-GaAs; GaAs; GaAs substrates; InxGa1-xAs buffers; counter doped p- cap layers; n-InGaAs/buffer/GaAs structures; n-type InGaAs epitaxial layers; quasi-Schottky contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961523
