DocumentCode
1318717
Title
GaAs MESFET injection planar Gunn diode optronic applications
Author
Driouch, F. ; Cailleu, D. ; Friscourt, M.R. ; Dalle, C.
Author_Institution
CNRS, Villeneuve d´´Ascq, France
Volume
32
Issue
24
fYear
1996
fDate
11/21/1996 12:00:00 AM
Firstpage
2274
Lastpage
2276
Abstract
Potential nonlinear optronic applications of GaAs MESFET injection planar Gunn diode oscillators have been investigated. The possibilities of upconversion, mixing and injection locking have been theoretically demonstrated. The feasibility of upconversion of a low frequency modulated optical signal to the millimetre wave region is experimentally confirmed
Keywords
Gunn diodes; Gunn oscillators; III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; injection locked oscillators; millimetre wave frequency convertors; millimetre wave mixers; millimetre wave oscillators; optoelectronic devices; 33 GHz; EHF; GaAs; GaAs MESFET injection oscillators; MM-wave oscillators; injection locking; mixing; nonlinear optronic applications; planar Gunn diode oscillators; upconversion;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961500
Filename
556832
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