DocumentCode :
1318717
Title :
GaAs MESFET injection planar Gunn diode optronic applications
Author :
Driouch, F. ; Cailleu, D. ; Friscourt, M.R. ; Dalle, C.
Author_Institution :
CNRS, Villeneuve d´´Ascq, France
Volume :
32
Issue :
24
fYear :
1996
fDate :
11/21/1996 12:00:00 AM
Firstpage :
2274
Lastpage :
2276
Abstract :
Potential nonlinear optronic applications of GaAs MESFET injection planar Gunn diode oscillators have been investigated. The possibilities of upconversion, mixing and injection locking have been theoretically demonstrated. The feasibility of upconversion of a low frequency modulated optical signal to the millimetre wave region is experimentally confirmed
Keywords :
Gunn diodes; Gunn oscillators; III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; injection locked oscillators; millimetre wave frequency convertors; millimetre wave mixers; millimetre wave oscillators; optoelectronic devices; 33 GHz; EHF; GaAs; GaAs MESFET injection oscillators; MM-wave oscillators; injection locking; mixing; nonlinear optronic applications; planar Gunn diode oscillators; upconversion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961500
Filename :
556832
Link To Document :
بازگشت