The determination of Si-SiO2 interface trap density in irradiated four-terminal VDMOSFETs using charge pumping

The utility of charge pumping to measure Si-SiO₂ interface trap density in irradiated four-terminal VDMOSFETs is demonstrated. A modification of the conventional charge pumping approach is employed, where recombination of charge through interface traps in the neck region is measured in the drain. Three components of drain current resulting from the charge pumping measurement are identified. When the device is properly biased, charge pumping current can be separated from the other components of drain current and modeled over a wide range of interface trap densities using standard charge pumping theory. When sources of error are accounted for, radiation-induced interface trap densities measured with charge pumping are in good quantitative agreement with those estimated with the midgap charge separation and subthreshold hump techniques