Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices

Author

Emelianov, V.V. ; Sogoyan, A.V. ; Meshurov, O.V. ; Ulimov, V.N. ; Pershenkov, V.S.

Author_Institution

Res. Inst. of Sci. Instrum., Moscow, Russia

Volume

Issue

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2572

Lastpage

2578

Abstract

Modeling of the field and thermal dependencies of radiation-induced charge annealing, based on the assumption that the energy level of defects in the oxide is located within the Si forbidden gap, is described and verified. A novel concept of the thermoactivated nature of tunneling exchange between the defects and the Si substrate is proposed

Keywords

MOSFET; annealing; defect states; electron beam effects; semiconductor device models; tunnelling; MOS devices; MOSFETs; Si; Si forbidden gap; Si substrate; Si-SiO₂; Si/SiO₂ interface; defect energy level; electron irradiation; field dependence; modeling; oxide; radiation-induced charge annealing; thermal dependence; thermoactivated tunneling exchange; Annealing; Charge carrier processes; Electron traps; Energy states; Instruments; Lattices; MOS devices; Power engineering and energy; Silicon; Tunneling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556838

Filename

556838

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318764