Breakdown properties of irradiated MOS capacitors

Author

Paccagnell, A. ; Candelori, A. ; Milani, A. ; Formigoni, E. ; Ghidini, G. ; Pellizzer, F. ; Drera, D. ; Fuochi, P.G. ; Lavale, M.

Author_Institution

Dipartimento di Elettronica e Inf., Padova Univ., Italy

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2609

Lastpage

2616

Abstract

We have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co⁶⁰ gamma and 10¹⁴ neutrons/cm² only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in a few of the oxides tested

Keywords

MOS capacitors; electric breakdown; electron beam effects; gamma-ray effects; neutron effects; semiconductor device reliability; semiconductor device testing; 17 Mrad; 20 Mrad; 200 nm; 8 nm; MOS capacitors; Si-SiO₂; average breakdown field; breakdown properties; charge-to-breakdown; cumulative failure distributions; electron irradiation; gamma irradiation; high dose irradiation; ionizing radiation; neutron irradiation; nonionizing radiation; thick oxides; thin oxides; time-to-breakdown; Breakdown voltage; Detectors; Dielectrics; Electric breakdown; Electrons; Ionizing radiation; MOS capacitors; MOS devices; Microelectronics; Strips;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556843

Filename

556843