Title :
Buried stacked insulator: new SOI-structure formed by ion beam synthesis
Author :
Skorupa, Wolfgang ; Schoneich, J. ; De Veirman, A. ; Albrecht, John
Author_Institution :
Central Inst. for Nucl. Res., Dresden, Germany
Abstract :
The formation of a new SOI-structure is proposed and the first experimental results are presented. Using high dose implantation of nitrogen and oxygen, a buried stacked layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) was formed in single crystalline silicon.
Keywords :
ion implantation; semiconductor technology; semiconductor-insulator boundaries; silicon compounds; N + implantation; O + implantation; SIMOX technology; SOI-structure; SiO 2-SiO xN y-Si 3N 4; buried stacked insulator; buried stacked layer; experimental results; high dose implantation; ion beam synthesis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910131
