• DocumentCode
    1318810
  • Title

    Buried stacked insulator: new SOI-structure formed by ion beam synthesis

  • Author

    Skorupa, Wolfgang ; Schoneich, J. ; De Veirman, A. ; Albrecht, John

  • Author_Institution
    Central Inst. for Nucl. Res., Dresden, Germany
  • Volume
    27
  • Issue
    3
  • fYear
    1991
  • Firstpage
    202
  • Lastpage
    204
  • Abstract
    The formation of a new SOI-structure is proposed and the first experimental results are presented. Using high dose implantation of nitrogen and oxygen, a buried stacked layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) was formed in single crystalline silicon.
  • Keywords
    ion implantation; semiconductor technology; semiconductor-insulator boundaries; silicon compounds; N + implantation; O + implantation; SIMOX technology; SOI-structure; SiO 2-SiO xN y-Si 3N 4; buried stacked insulator; buried stacked layer; experimental results; high dose implantation; ion beam synthesis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910131
  • Filename
    83209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318810