• DocumentCode
    1318853
  • Title

    W-band monolithic frequency doubler using vertical GaAs varactor diode with n+ buried layer

  • Author

    Hegazi, G. ; Ezzeddine, A. ; McNally, Peter ; Pande, Krishna ; Rice, P.

  • Author_Institution
    COMSAT Labs., Clarksburg, MD, USA
  • Volume
    27
  • Issue
    3
  • fYear
    1991
  • Firstpage
    213
  • Lastpage
    214
  • Abstract
    A W-band monolithic frequency doubler was designed and fabricated using a vertical GaAs varactor diode that has an n+ buried layer and uses a mesa isolation process. An output power of 30 mW was obtained from this chip at 93 GHz with a conversation efficiency of 12%. This is believed to be the first reported W-band monolithic varactor diode frequency doubler.
  • Keywords
    III-V semiconductors; MMIC; frequency multipliers; gallium arsenide; solid-state microwave devices; varactors; 12 percent; 30 mW; 93 GHz; EHF; MIMIC; W-band; conversation efficiency; mesa isolation process; monolithic frequency doubler; n + buried layer; output power; semiconductors; varactor diode frequency doubler; vertical GaAs varactor diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910138
  • Filename
    83216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318853