Realisation of very high transconductance GaAs MESFETs

Author

Godts, P. ; Vanbremeersch, J. ; Constant, E. ; Zimmermann, J.

Author_Institution

Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France

Volume

24

Issue

13

fYear

1988

fDate

6/23/1988 12:00:00 AM

Firstpage

775

Lastpage

776

Abstract

By using a model which considers velocity overshoot, it is shown that the performance of GaAs MESFETs in enhancement mode depends strongly on the geometrical and electrical characteristics of the access region between source and gate. The sheet resistance of the unrecessed epilayer, and the distance between the source-end of the recessed region and the gate, have to be as small as possible. 300 nm gate length MESFETs with very low values for these parameters were realised with an n-GaAs active layer (6×10¹⁷ cm^-3). These devices exhibit very high microwave transconductances (800 mS/mm) with good cutoff frequencies (up to 55 GHz). This result suggests that very high transconductance MESFETs can be fabricated from not-too-heavily doped active layers provided that the characteristics of the source-gate access region is properly optimised

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor technology; solid-state microwave devices; 300 nm; 55 GHz; GaAs; MESFETs; access region; cutoff frequencies; electrical characteristics; enhancement mode; geometrical characteristics; high microwave transconductances; model; performance; sheet resistance; source-gate access region; submicron FETs; unrecessed epilayer; velocity overshoot;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

8322