DocumentCode
1318955
Title
InGaAs/InP-photodiodes with dark current limited by generation-recombination
Author
Buchali, Fred ; Behrendt, R. ; Heymann, G.
Author_Institution
Humboldt Univ., Berlin, Germany
Volume
27
Issue
3
fYear
1991
Firstpage
235
Lastpage
237
Abstract
From I(V) and C(V) measurements the conclusion is made that among the sources of dark current in InGaAs/InP diodes, generation-recombination current dominates. Four different contributions to the dark from material layers have been identified. The highest generation rate was observed in the InP buffer layer. Various traps causing the dark current in these different layers have also been identified.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; leakage currents; optical communication equipment; photodiodes; semiconductor device models; C-V characteristics; I-V characteristics; InGaAs-InP; InP buffer layer; generation-recombination current; semiconductor; sources of dark current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910152
Filename
83230
Link To Document