DocumentCode :
1318986
Title :
An 800 MS/s Dual-Residue Pipeline ADC in 40 nm CMOS
Author :
Vecchi, Davide ; Mulder, Jan ; Van der Goes, Frank M L ; Westra, Jan R. ; Ayranci, Emre ; Ward, Christopher M. ; Wan, Jiansong ; Bult, Klaas
Author_Institution :
Broadcom Netherlands B.V., Bunnik, Netherlands
Volume :
46
Issue :
12
fYear :
2011
Firstpage :
2834
Lastpage :
2844
Abstract :
This paper presents a 12-bit dual-residue pipeline ADC allowing the use of low gain and low bandwidth residue amplifiers to achieve 59 dB peak SNDR at 800 MSample/s. The dual-residue architecture is insensitive to the open-loop gain and the bandwidth of the residue amplifiers. However, their offset limits the accuracy of the entire ADC and therefore a background offset calibration technique was implemented. The high sampling speed was obtained through four times interleaving, requiring gain and offset calibration between the interleaved ADC lanes. The ADC was realized in a standard 40 nm CMOS technology, operates from a dual 1 V/2.5 V power supply, utilizes an input range of 1.2 V peak-to-peak differential, and consumes 105 mW.
Keywords :
CMOS integrated circuits; amplifiers; analogue-digital conversion; calibration; CMOS technology; background offset calibration technique; dual-residue pipeline ADC architecture; high sampling speed; low bandwidth residue amplifiers; open-loop gain; power 105 mW; size 40 nm; voltage 1 V; voltage 1.2 V; voltage 2.5 V; word length 12 bit; AC-DC power converters; CMOS integrated circuits; Calibration; Interleaved codes; Interpolation; Low power electronics; ADC; CMOS; FOM; analog-to-digital conversion; calibration; dual-residue; high-resolution ADC; high-speed ADC; low-power; offset calibration; pipeline; time-interleaving; zero-crossing;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2011.2164301
Filename :
6017145
Link To Document :
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