Title :
Shielding considerations for satellite microelectronics
Author :
Fan, Wesley C. ; Drumm, Clifton R. ; Roeske, Stanley B. ; Scrivner, Gary J.
Author_Institution :
Dept. of Radiat. & Electromagn. Anal., Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
Shielding for space microelectronics needs to provide an acceptable dose rate with minimum shield mass. The analysis presented here shows that the best approach is, in general, to use a graded-Z shield, with a high-Z layer sandwiched between two low-Z materials. A graded-Z shield is shown to reduce the electron dose rate by more than sixty percent over a single-material shield of the same areal density. For protons, the optimal shield would consist of a single, low-Z material layer. However, it is shown that a graded-Z shield is nearly as effective as a single-material shield, as long as a low-Z layer is located adjacent to the microelectronics. A specific shield design depends upon the details of the radiation environment, system model, design margins/levels, compatibility of shield materials, etc. Therefore, we present here general principles for designing effective shields and describe how the computer codes are used for this application
Keywords :
artificial satellites; electron beam effects; proton effects; radiation protection; shielding; space vehicle electronics; computer code; design; electron irradiation; graded-Z material; proton irradiation; satellite microelectronics; shielding; space radiation environment; Belts; Earth; Electron traps; Magnetic shielding; Microelectronics; Orbits; Protons; Radiation effects; Satellites; Space charge;
Journal_Title :
Nuclear Science, IEEE Transactions on