DocumentCode
1319005
Title
Negative conductance in semiconductors
Author
Kroemer, Herbert
Author_Institution
Fairchild Semiconductor
Volume
5
Issue
1
fYear
1968
Firstpage
47
Lastpage
56
Abstract
Until recently, investigators have been frustrated in their attempts at applying microwave and millimeter-wave frequencies to semiconductor devices. During the last few years, the discovery of avalanche transit-time and Gunn effects in bulk semiconductors has been met with overwhelming enthusiasm. The successful fabrication of models presently utilizing these negative-conductance phenomena has given these high-frequency devices an optimistic outlook for the future.
Keywords
Conductivity; Electrons; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Microwave transistors; Physics; Semiconductor devices; Solid state circuits;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1968.5215632
Filename
5215632
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