Title :
First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT
Author :
Delage, S.L. ; di Forte-Poisson, M.A. ; Blanck, H. ; Brylinski, Christian ; Chartier, E. ; Collot, P.
Author_Institution :
Thomson-CSF/LCR, Domaine de Corbeville, Orsay, France
Abstract :
The microwave characterisation of GaInP/GaAs HBTs is reported. The structures are grown by LP-MOCVD, and carbon base doping is used. The transistor design is basically multimesas and the devices are obtained using a combination of dry and wet etching. The current and power gain cutoff frequencies of these devices are, respectively, 30 GHz and 45 GHz.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor technology; solid-state microwave devices; vapour phase epitaxial growth; 30 GHz; 45 GHz; GaAs:C; GaInP-GaAs; LP-MOCVD; current gain cutoff frequency; low pressure MOCVD; microwave characterisation; multimesas; power gain cutoff frequencies; self-aligned HBT; semiconductors; transistor design; wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910163
