• DocumentCode
    1319032
  • Title

    First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT

  • Author

    Delage, S.L. ; di Forte-Poisson, M.A. ; Blanck, H. ; Brylinski, Christian ; Chartier, E. ; Collot, P.

  • Author_Institution
    Thomson-CSF/LCR, Domaine de Corbeville, Orsay, France
  • Volume
    27
  • Issue
    3
  • fYear
    1991
  • Firstpage
    253
  • Lastpage
    254
  • Abstract
    The microwave characterisation of GaInP/GaAs HBTs is reported. The structures are grown by LP-MOCVD, and carbon base doping is used. The transistor design is basically multimesas and the devices are obtained using a combination of dry and wet etching. The current and power gain cutoff frequencies of these devices are, respectively, 30 GHz and 45 GHz.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor technology; solid-state microwave devices; vapour phase epitaxial growth; 30 GHz; 45 GHz; GaAs:C; GaInP-GaAs; LP-MOCVD; current gain cutoff frequency; low pressure MOCVD; microwave characterisation; multimesas; power gain cutoff frequencies; self-aligned HBT; semiconductors; transistor design; wet etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910163
  • Filename
    83241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319032