• DocumentCode
    1319044
  • Title

    Non-destructive measurements for CMOS devices using charge-collection techniques

  • Author

    Edmonds, Larry ; Swift, Gary ; Johnston, Alla

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    43
  • Issue
    6
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2833
  • Lastpage
    2842
  • Abstract
    Results of an experiment providing initial validation of the use of charge-collection spectroscopy to measure the over-layer and epitaxial thickness and substrate diffusion length are given for several CMOS SRAM test devices
  • Keywords
    CMOS memory circuits; SRAM chips; integrated circuit measurement; CMOS SRAM device; charge-collection spectroscopy; epitaxial thickness; nondestructive measurement; over-layer thickness; substrate diffusion length; Charge measurement; Current measurement; Length measurement; Nuclear measurements; Semiconductor process modeling; Space technology; Spectroscopy; Substrates; Testing; Thickness measurement;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.556874
  • Filename
    556874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319044