Title :
Comparison of beam blanking SEM and heavy ion SEU tests on NASDA´s 64 kbit SRAMs
Author :
Pesce, Anastasia ; Aoki, J. ; Hada, Takashi ; Nemoto, Norio ; Akutsu, Takao ; Matsuda, Sumio ; Igarashi, Toshio ; Baba, Shinji
Author_Institution :
NASDA, Tsukuba Space Center, Japan
fDate :
12/1/1996 12:00:00 AM
Abstract :
Beam Blanking SEM (Beam Blanking Scanning Electron Microscope) was successfully used to measure and to map soft error sites on 64 kbit memory cells. Cross-section versus beam current and LET curves derived from BBSEM and heavy ion tests, respectively, have been compared. A linear relation between BBSEM current and heavy ion LET has been suggested
Keywords :
SRAM chips; integrated circuit testing; ion beam effects; scanning electron microscopy; 64 kbit; LET; SRAM; beam blanking SEM; cross-section; heavy ion SEU testing; memory cell; soft errors; Blanking; Electron beams; Extraterrestrial measurements; Low earth orbit satellites; MOSFETs; Random access memory; Scanning electron microscopy; Single event upset; Space missions; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
