Title :
Ku-band high frequency high gain pseudomorphic HEMT
Author :
Smith, P.M. ; Kopp, W.F. ; Ho, P. ; Chao, P.C. ; Smith, R.P. ; Nordheden, K. ; Ballingall, J.M.
Author_Institution :
Electron. Lab., Gen. Electr. Co., Syracuse, NY, USA
Abstract :
A 0.25 mu m gate length, 1600 mu m gate width, double-heterojunction pseudomorphic HEMT with moderate output power and record power gain and efficiency is reported. At 15 GHz, output power is 575 mW with 12 dB gain and 50% power-added efficiency.
Keywords :
high electron mobility transistors; solid-state microwave devices; 0.25 micron; 12 dB; 15 GHz; 1600 micron; 50 percent; 575 mW; Ku-band; SHF; double-heterojunction; gate length; gate width; high frequency; high gain; microwave transition; power gain; power-added efficiency; pseudomorphic HEMT; submicron gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910172
