Title :
Single Event Upset cross sections at various data rates
Author :
Reed, R.A. ; Carts, M.A. ; Marshall, P.W. ; Marshall, C.J. ; Buchner, S. ; Macchia, M. La ; Mathes, B. ; McMorrow, D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
We present data which show that Single Event Upset (SEU) cross section varies linearly with frequency for most devices tested. We show that the SEU cross section can increase dramatically away from a linear relationship when the test setup is not optimized, or when testing near the maximum operating frequency. We also observe non-linear behavior in some complex circuit topologies. Knowledge of the relationship between SEU cross section and frequency is important for estimates of on-orbit SEU rates
Keywords :
ion beam effects; data rate; frequency dependence; semiconductor device; single event upset cross section; space environment; Circuit testing; Clocks; Coupling circuits; Delay; Frequency estimation; Gallium arsenide; Laboratories; Logic devices; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
