DocumentCode
1319177
Title
Void elimination by lateral gap diffusion in silicon direct bonding (SDB) technology
Author
Tong, Q.-Y. ; Qing, Ming
Author_Institution
Microelectron. Center, Southeast Univ., Nanjing, China
Volume
27
Issue
3
fYear
1991
Firstpage
288
Lastpage
289
Abstract
Voids at bonding seams caused by trapped air pockets during room temperature contacting can be eliminated by lateral gap diffusion. The optimised bonding temperature has been found to be around 1000 degrees C to realise void-free bonding interfaces.
Keywords
diffusion in solids; elemental semiconductors; microassembling; semiconductor technology; silicon; 1000 degC; Si direct bonding technology; Si wafer; Si/Si direct bonding; bonding seams; lateral gap diffusion; optimised bonding temperature; room temperature contacting; trapped air pockets; void elimination; void-free bonding interfaces;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910182
Filename
83260
Link To Document