Title :
SEGR and SEB in n-channel power MOSFETs
Author :
Allenspach, M. ; Dachs, C. ; Johnson, G.H. ; Schrimpf, R.D. ; Lorfèvre, E. ; Palau, J.M. ; Brews, J.R. ; Galloway, K.F. ; Titus, J.L. ; Wheatley, C.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested
Keywords :
ion beam effects; power MOSFET; radiation hardening (electronics); SEB; SEGR; ion irradiation; n-channel power MOSFET; radiation hardening; single-event burnout; single-event gate rupture; Cranes; Degradation; Electric breakdown; Feedback; MOSFETs; Military computing; Power engineering and energy; Power engineering computing; Radiation hardening; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
