Title :
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
Author :
Johnson, G.H. ; Galloway, K.F. ; Schrimpf, R.D. ; Titus, J.L. ; Wheatley, C.F. ; Allenspach, M. ; Dachs, C.
Author_Institution :
Arizona Univ., Tucson, AZ, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling
Keywords :
ion beam effects; power MOSFET; n-channel power MOSFET; single-event-gate-rupture cross-section; two-dimensional computer model; Charge carrier processes; Cranes; Electrodes; FETs; Ion beams; MOSFETs; Neck; Numerical simulation; Power transistors; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
