Quantitative estimation of generation rates of Si/SiO2 interface defects by MeV He single ion irradiation

Generation rates of the interface defects, namely, the oxide trapped holes and the interface states for both n-ch MOSFETs (nMOS) and p-ch MOSFETs (pMOS) by MeV He single ions at zero bias conditions have been investigated quantitatively. The number of oxide trapped holes induced in nMOS and pMOS by 2 MeV He single ion have been estimated to be about 17.5 and 8.5, respectively. The number of interface states induced in nMOS and pMOS have been estimated to be about 6.6 and 2.4, respectively. The difference between nMOS and pMOS in the number of oxide trapped holes has been attributed to the difference in the surviving rate of holes during ion irradiation. By investigating the field-dependence of single ion induced oxide trapped holes, it has been found that the surviving rate of holes generated in oxide layer by ion irradiation for 2 MeV He ion varies as a power law dependence on electric field with an exponent of about 0.7 in the range between 0.0 to 2.0 MV/cm at room temperature