Title :
DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFETs
Author :
Gueissaz, F. ; Houdre, R. ; Ilegems, M.
Author_Institution :
Inst. de Micro- et Optoelectron, Ecole Polytech. Federale de Lausanne, Switzerland
fDate :
4/11/1991 12:00:00 AM
Abstract :
DC and microwave measurements on 0.7 mu m single-gate (SG) and dual-gate (DG) In0.52Al0.48As/In0.53Ga0.47As planar doped two-dimensional electron gas field-effect transistors (TEGFETs) are reported. The DG devices show a large increase of the gm to gD ratios, which are as high as 100 at gm=380 mS/mm, compared with 12 at 420 mS/mm for the single gate (SG) devices on the same chip, as well as 6 dB improvement in the RF power gain compared with their SG counterparts.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.7 micron; 380 mS; 420 mS; DC characteristics; In 0.52Al 0.48As-In 0.53 Ga 0.47As; RF characteristics; RF power gain; dual-gate TEGFETs; microwave measurements; planar doped two-dimensional electron gas field-effect transistors; single gate devices; transconductance ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910396
