The impact of space protons on X-ray sensing with charge coupled devices (CCDs)

Author

Holmes-Siedle, Andrew ; Holland, Andrew ; Watts, Stephen

Author_Institution

Dept. of Phys., Brunel Univ. of West London, Uxbridge, UK

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2998

Lastpage

3004

Abstract

The latest, large-geometry silicon charge-coupled device technology for X-ray astronomy has been characterized with respect to the impact of space protons. Extensive radiation damage of physical interest include a better understanding of the roles of VP, VO and VV defects in the prediction of performance in orbit are proposed. The importance of photon hit rate and X-ray energy in determining the CTI damage constant was confirmed. In CCD manufacture, improvements of tolerance to particle damage can be made. We recommend a lower operating temperature in orbit (-110 or lower rather than -90°C)

Keywords

CCD image sensors; X-ray astronomy; X-ray detection; astronomical instruments; cryogenic electronics; proton effects; radiation hardening (electronics); silicon; -110 C; -90 C; CCD image sensors; CCD manufacture; CTI damage constant; X-ray astronomy; X-ray energy; X-ray sensing; defects; extensive radiation damage; large-geometry silicon charge-coupled device technology; lower operating temperature; orbit; particle damage; photon hit rate; space proton effects; Astronomy; Charge coupled devices; Clocks; Electrons; Extraterrestrial measurements; Instruments; Potential well; Protons; Space charge; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556897

Filename

556897