Title :
Degradation and recovery of In0.53Ga0.47As photodiodes by 1-MeV fast neutrons
Author :
Ohyama, H. ; Vanhellemont, J. ; Takami, Y. ; Hayama, K. ; Kudou, T. ; Hakata, T. ; Kohiki, S. ; Sunaga, H.
Author_Institution :
Kumamoto Nat. Coll. of Technol., Japan
fDate :
12/1/1996 12:00:00 AM
Abstract :
Irradiation damage in In0.53Ga0.47As p-i-n photodiodes by 1-MeV fast neutrons is studied as a function of fluence for the first time. The degradation of the electrical and optical performance of diodes increases with increasing fluence. The induced lattice defects in the In0.53Ga0.47As epitaxial layers and the InP substrate are studied by DLTS methods. In the In0.53Ga0.47As epitaxial layers, hole and electron capture levels are induced by irradiation. The influence of radiation source on device degradation is then discussed by comparison to 1-MeV electrons with respect to the numbers of knock-on atoms and the nonionizing energy loss (NIEL). In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300°C. After 300°C thermal annealing, the light current only recovers to 20% of pre-irradiation for a fluence of 1×1013 n/cm2, while it recovers to 53% for a fluence of 1×1015 e/cm2. The different of recovery behavior is thought to be due a different type of radiation damage
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; neutron effects; p-i-n photodiodes; radiation hardening; semiconductor device testing; semiconductor epitaxial layers; 1 MeV; 75 to 300 C; DLTS methods; In0.53Ga0.47As; In0.53Ga0.47As epitaxial layers; In0.53Ga0.47As p-i-n photodiodes; In0.53Ga0.47As photodiodes; InP; InP substrate; MeV electrons; MeV fast neutrons; device degradation; electrical performance; electron capture levels; hole capture levels; induced lattice defects; irradiation damage; isochronal thermal annealing; knock-on atoms; light current; nonionizing energy loss; optical performance; radiation damage; recovery behavior; thermal annealing; Annealing; Degradation; Epitaxial layers; Indium phosphide; Lattices; Neutrons; P-i-n diodes; PIN photodiodes; Radioactive decay; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
