• DocumentCode
    1319393
  • Title

    Optical switching in an asymmetric Fabry-Perot with high contrast ratio and very low insertion loss

  • Author

    Moloney, M.H. ; Hegarty, J. ; Roberts, Jeffrey S.

  • Volume
    27
  • Issue
    8
  • fYear
    1991
  • fDate
    4/11/1991 12:00:00 AM
  • Firstpage
    659
  • Lastpage
    660
  • Abstract
    All-optical switching in a normally-off asymmetric Fabry-Perot etalon is reported. The switching action is based on optically induced absorption and refractive index changes in a GaAs-AlGaAs multiple quantum well. A high switching contrast ratio with a very low associated insertion loss is obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical losses; optical saturable absorption; optical switches; refractive index; semiconductor quantum wells; GaAs-AlGaAs; MQW; asymmetric Fabry-Perot etalon; high contrast ratio; low insertion loss; multiple quantum well; optical switching; optically induced absorption; refractive index changes; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910413
  • Filename
    83294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319393