Title :
High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets
Author :
Hamada, H. ; Shono, M. ; Honda, S. ; Hiroyama, U. ; Matsukawa, K. ; Yodoshi, K. ; Yamaguchi, T.
Author_Institution :
Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
4/11/1991 12:00:00 AM
Abstract :
High-power type AlGaInP laser diodes ( lambda L=635 nm) with the current-blocking region near the facets have been successfully fabricated for the first time, by MOCVD using
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser frequency stability; laser modes; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 20 mW; 33 mW; 630 nm; 635 nm; AlGaInP laser diodes; GaAs; GaAs substrates; MOCVD; current-blocking region; facets; semiconductor lasers; transverse-mode stabilised;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910414
