DocumentCode :
1319579
Title :
Bulk negative-resistance semiconductor devices
Author :
Copeland, John A.
Author_Institution :
Bell Telephone Laboratories, Inc.
Volume :
4
Issue :
5
fYear :
1967
fDate :
5/1/1967 12:00:00 AM
Firstpage :
71
Lastpage :
77
Abstract :
Recent research on semiconductors that exhibit bulk negative resistivity has led to new devices for pulse regeneration, logic function generation, amplification, and millimeter-wave power generation. These are bulk devices in the sense that ac gain is derived from the bulk negative-resistance property of certain uniform semiconductors, rather than from the properties of junctions between different types of semiconductors. Bulk devices are capable of operating with more power at higher speeds and frequencies than conventional junction devices such as transistors.
Keywords :
Conductivity; Electrons; Gallium arsenide; Physics; Power generation; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Space charge; Voltage;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1967.5215757
Filename :
5215757
Link To Document :
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