Enhanced total dose damage in junction field effect transistors and related linear integrated circuits

Author

Flament, O. ; Autran, J.L. ; Roche, P. ; Leray, J.L. ; Musseau, O. ; Truche, R. ; Orsier, E.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

3060

Lastpage

3067

Abstract

Enhanced total dose damage of Junction Field-effect Transistors (JFETs) due to low dose rate and/or elevated temperature has been investigated for elementary p-channel structures fabricated on bulk and SOI substrates as well as for related linear integrated circuits. All these devices were fabricated with conventional junction isolation (field oxide). Large increases in damage have been revealed by performing high temperature and/or low dose rate irradiations. These results are consistent with previous studies concerning bipolar field oxides under low-field conditions. They suggest that the transport of radiation-induced holes through the oxide is the underlying mechanism. Such an enhanced degradation must be taken into account for low dose rate effects on linear integrated circuits

Keywords

JFET integrated circuits; X-ray effects; field effect analogue integrated circuits; gamma-ray effects; integrated circuit measurement; integrated circuit modelling; junction gate field effect transistors; silicon-on-insulator; SOI substrates; dose rate; elevated temperature irradiation; enhanced total dose damage; junction field effect transistors; junction isolation; linear integrated circuits; low-field conditions; p-channel structures; radiation-induced holes; Analog integrated circuits; Circuit testing; Degradation; FETs; JFETs; MOSFETs; Operational amplifiers; Performance evaluation; Temperature sensors; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556905

Filename

556905