• DocumentCode
    1319731
  • Title

    Accurate charge control model for MODFET including subthreshold region

  • Author

    Tong, K.Y.

  • Author_Institution
    Dept. of Electron. Eng., Hong Kong Polytech., Hung Ham, Hong Kong
  • Volume
    27
  • Issue
    8
  • fYear
    1991
  • fDate
    4/11/1991 12:00:00 AM
  • Firstpage
    668
  • Lastpage
    669
  • Abstract
    A simple analytical model is proposed for the Fermi level as a function of the channel carrier density in a modulation doped FET (MODFET). It agrees well with numerical results including low carrier densities near the subthreshold region. The drain current is derived including drift and diffusion current, and the saturation drain current from the author´s model agrees well with experiment.
  • Keywords
    carrier density; high electron mobility transistors; semiconductor device models; Fermi level; HEMT; MODFET; channel carrier density; charge control model; diffusion current; drift current; modulation doped FET; saturation drain current; subthreshold region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910418
  • Filename
    83299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319731