Title :
Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask
Author :
Wu, Guodong ; Zhou, Jumei ; Zhang, Hongliang ; Zhu, Liqiang ; Wan, Qing
Author_Institution :
Ningbo Inst. of Mater. Technol. & Eng., Ningbo, China
Abstract :
A gradient shadow-mask diffraction method is proposed for the fabrication of junctionless indium-tin-oxide (ITO) and indium-zinc-oxide (IZO) thin-film transistors (TFTs) with different channel thicknesses on one glass substrate during one-batch radio-frequency magnetron sputtering. The operation mode and saturation field-effect mobility of the room-temperature-processed oxide-based junctionless TFTs are channel thickness dependent, and the threshold voltages shift from negative to positive when the self-assembled channel thickness is reduced to a critical thickness.
Keywords :
II-VI semiconductors; indium compounds; masks; self-assembly; sputter deposition; thin film transistors; wide band gap semiconductors; ITO; InZnO; channel thickness; glass substrate; gradient shadow mask diffraction method; junctionless indium tin oxide thin film transistor; juntionless indium zinc oxide thin film transistor; low-voltage junctionless oxide-based thin-film transistor; one batch radiofrequency magnetron sputtering; room-temperature-processed oxide-based junctionless TFT; saturation field effect mobility; self-assembled channel thickness; Capacitance; Indium tin oxide; Sputtering; Substrates; Thin film transistors; Threshold voltage; Gradient mask diffraction; junctionless thin-film transistors (TFTs); operation mode modulation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2217934
