DocumentCode :
1319816
Title :
Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches
Author :
Moon, Taeho ; Jung, Ji-Chul ; Han, Yong ; Jeon, Youngin ; Koo, Sang-Mo ; Kim, Sangsig
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume :
59
Issue :
12
fYear :
2012
Firstpage :
3288
Lastpage :
3291
Abstract :
The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.
Keywords :
logic circuits; logic gates; memristors; nanowires; Si-based memristive switches; Si-nanowire-based memristive switches; crossbar-array architecture; external strain; flexible electronics; flexible logic circuit; flexible logic gates; heavily doped p-type Si; logic circuits; logic gate analysis; logic performances; top-down-fabricated Si nanowires; Junctions; Logic circuits; Logic gates; Optical switches; Silicon; Flexible electronics; Si nanowire (NW); logic gate; memristive switches; top-down approach;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2220778
Filename :
6332494
Link To Document :
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