• DocumentCode
    1319844
  • Title

    Electronic Conduction Mechanism in Atom Switch Using Polymer Solid Electrolyte

  • Author

    Sakamoto, Toshitsugu ; Tada, Munehiro ; Okamoto, Koichiro ; Hada, Hiromitsu

  • Author_Institution
    Low-Power Electron. Assoc. & Project, Tsukuba, Japan
  • Volume
    59
  • Issue
    12
  • fYear
    2012
  • Firstpage
    3574
  • Lastpage
    3577
  • Abstract
    Low-temperature characterization of electrical transport on atom switches has been performed to clarify operation and conducting mechanisms. The low resistive (ON) state (<; 400 Ω) shows metallic conduction accompanied with a high residual resistance. In the high resistive (OFF) state(>;108), the resistance exponentially increases with decreasing temperature due to Poole-Frenkel conduction. In the intermediate range (105 - 107 Ω), the resistance has small temperature dependence since the electron tunneling via Cu residues in a solid electrolyte is dominant. The polymer solid electrolyte enables the complete collection of the Cu residues without degrading the electrolyte, resulting in forming-free operation and a high on/off conductance ratio.
  • Keywords
    polymers; temperature; tunnelling; Cu residues; Poole-Frenkel conduction; atom switches; decreasing temperature; electrical transport; electron tunneling; electronic conduction mechanism; forming-free operation; high on/off conductance ratio; high residual resistance; low resistive state; low-temperature characterization; metallic conduction; polymer solid electrolyte; small temperature dependence; Dielectrics; Electrodes; Resistance; Switches; Temperature measurement; Tunneling; Atom switch; Coulomb blockade; Poole–Frenkel (P–F) emission; forming free; resistive RAM (ReRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2219051
  • Filename
    6332498