DocumentCode
1319846
Title
Total dose hardness assurance techniques for new generation COTS devices
Author
Lee, C.I. ; Rax, B.G. ; Johnston, A.H.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
3145
Lastpage
3150
Abstract
Hardness assurance techniques and total dose radiation characterization data for new generation linear and COTS devices from various manufacturers are presented. A bipolar op amp showed more degradation at high dose rate than at low dose rate, which is opposite to the behavior of many other bipolar linear devices. New generation low-power op amps showed more degradation in electrical parameters with total power supply voltage of 3 V than at higher voltages. Minimum operating voltage is an important characterization parameter for newer low-power linear circuit designs
Keywords
bipolar analogue integrated circuits; integrated circuit testing; operational amplifiers; radiation hardening (electronics); 3 V; COTS device; bipolar op amp; electrical parameters; linear device; low-power circuit; total dose hardness assurance; Circuit testing; Degradation; Laboratories; Linear circuits; Operational amplifiers; Propulsion; Space missions; Space technology; Space vehicles; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556918
Filename
556918
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