DocumentCode :
1319866
Title :
Elevated temperature irradiation of bipolar linear microcircuits
Author :
Pease, Ronald L. ; Gehlhausen, Mark
Author_Institution :
RLP Res., Albuquerque, NM, USA
Volume :
43
Issue :
6
fYear :
1996
fDate :
12/1/1996 12:00:00 AM
Firstpage :
3161
Lastpage :
3166
Abstract :
In this study three conventional bipolar linear microcircuits, the LM101A operational amplifier, the LM124 quad operational amplifier, and the LM139 quad voltage comparator, were irradiated at high dose rate, elevated temperature and the results compared to low dose rate, room temperature response. While the high dose rate degradation at elevated temperature was greater than the degradation at room temperature, it was not as great as the degradation at low dose rate. Therefore, a hardness assurance test using elevated temperature irradiation at higher dose rates, designed to bound the very low dose rate response, will probably have to include overtest
Keywords :
bipolar analogue integrated circuits; comparators (circuits); gamma-ray effects; integrated circuit reliability; integrated circuit testing; operational amplifiers; radiation hardening (electronics); bipolar linear microcircuits; dose rate; elevated temperature irradiation; gamma-ray effects; hardness assurance test; operational amplifier; overtest; voltage comparator; Annealing; Circuit testing; Cranes; Degradation; Laboratories; Linear circuits; Operational amplifiers; Semiconductor device modeling; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.556920
Filename :
556920
Link To Document :
بازگشت