Elevated temperature irradiation of bipolar linear microcircuits

Author

Pease, Ronald L. ; Gehlhausen, Mark

Author_Institution

RLP Res., Albuquerque, NM, USA

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

3161

Lastpage

3166

Abstract

In this study three conventional bipolar linear microcircuits, the LM101A operational amplifier, the LM124 quad operational amplifier, and the LM139 quad voltage comparator, were irradiated at high dose rate, elevated temperature and the results compared to low dose rate, room temperature response. While the high dose rate degradation at elevated temperature was greater than the degradation at room temperature, it was not as great as the degradation at low dose rate. Therefore, a hardness assurance test using elevated temperature irradiation at higher dose rates, designed to bound the very low dose rate response, will probably have to include overtest

Keywords

bipolar analogue integrated circuits; comparators (circuits); gamma-ray effects; integrated circuit reliability; integrated circuit testing; operational amplifiers; radiation hardening (electronics); bipolar linear microcircuits; dose rate; elevated temperature irradiation; gamma-ray effects; hardness assurance test; operational amplifier; overtest; voltage comparator; Annealing; Circuit testing; Cranes; Degradation; Laboratories; Linear circuits; Operational amplifiers; Semiconductor device modeling; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556920

Filename

556920