DocumentCode
1319874
Title
Total dose and proton damage in optocouplers
Author
Rax, B.G. ; Lee, C.I. ; Johnston, A.H. ; Barnes, C.E.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
3167
Lastpage
3173
Abstract
Radiation damage from gamma rays and protons is investigated for two types of optocouplers with different physical configurations. Far more damage occurs from protons because of displacement damage, which reduces the photoresponse of the phototransistor and causes severe degradation in LED light output for one of the two device types. The other device type was far more resistant to radiation, primarily because it used a shorter wavelength LED that was relatively unaffected by protons
Keywords
opto-isolators; optoelectronic devices; proton effects; radiation hardening (electronics); LED light output; displacement damage; gamma rays; optocouplers; photoresponse; physical configurations; proton damage; total dose; Degradation; Gamma rays; Laboratories; Light emitting diodes; Optical coupling; Optical sensors; Optical surface waves; Phototransistors; Propulsion; Protons;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556921
Filename
556921
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