The use of conversion model for CMOS IC prediction in space environments

Author

Shvetzov-Shilovsky, I.N. ; Belyakov, V.V. ; Cherepko, S.V. ; Chumakov, A.I. ; Emelyanov, V.V. ; Pershenkov, V.S. ; Popov, M.Y. ; Zebrev, G.I.

Author_Institution

Moscow Eng. Phys. Inst., Russia

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

3182

Lastpage

3188

Abstract

A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitting and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments

Keywords

CMOS integrated circuits; MOSFET; X-ray effects; extrapolation; integrated circuit modelling; space vehicle electronics; CMOS IC prediction; conversion model; dose-rate ranges; extrapolation; irradiation environments; linear response theory; parameter fitting; space environments; time ranges; total dose sensitive MOSFET parameters; Annealing; CMOS integrated circuits; Circuit testing; Equations; Extrapolation; Integrated circuit modeling; MOSFET circuits; Predictive models; Semiconductor device modeling; Tunneling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556923

Filename

556923