• DocumentCode
    1320161
  • Title

    Modelling degeneracy for Monte-Carlo simulation of electron transport in GaAs

  • Author

    Yamada, Y.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Kumamoto Univ., Japan
  • Volume
    27
  • Issue
    8
  • fYear
    1991
  • fDate
    4/11/1991 12:00:00 AM
  • Firstpage
    679
  • Lastpage
    680
  • Abstract
    An improved method for modelling degeneracy in a Monte-Carlo simulation of electron transport in GaAs is proposed. It has been shown that the displacement of the distribution of electrons in k-space should be taken into account, when the degeneracy effects are implemented by using the energies of electrons.
  • Keywords
    III-V semiconductors; Monte Carlo methods; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; modelling; simulation; GaAs; Monte-Carlo simulation; degeneracy modelling; electron transport;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910424
  • Filename
    83305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1320161