Title :
Modelling degeneracy for Monte-Carlo simulation of electron transport in GaAs
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Kumamoto Univ., Japan
fDate :
4/11/1991 12:00:00 AM
Abstract :
An improved method for modelling degeneracy in a Monte-Carlo simulation of electron transport in GaAs is proposed. It has been shown that the displacement of the distribution of electrons in k-space should be taken into account, when the degeneracy effects are implemented by using the energies of electrons.
Keywords :
III-V semiconductors; Monte Carlo methods; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; modelling; simulation; GaAs; Monte-Carlo simulation; degeneracy modelling; electron transport;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910424
