DocumentCode
1320174
Title
Cryogenic random-access memories
Author
Sass, A.R. ; Stewart, W.C. ; Cosentino, L.S.
Author_Institution
RCA Laboratories
Volume
4
Issue
7
fYear
1967
fDate
7/1/1967 12:00:00 AM
Firstpage
91
Lastpage
98
Abstract
Three-wire cryoelectric memory cells and the hybrid AB system organization that utilizes coincident-current selection are examined from the standpoint of batch fabrication requirements, redundancy, electrical parameters, tolerances, and noise immunity. These advances, demonstrated with experimental sub-systems, are described in relation to previous work, and are shown to place cryoelectrics as a strong contender for achieving systems with capacities of more than 108 bits.
Keywords
Computer displays; Cost function; Cryogenics; Electric resistance; Fabrication; Laboratories; Refrigeration; Superconducting thin films; Switches; Thin film devices;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1967.5215859
Filename
5215859
Link To Document