Cryogenic random-access memories

Three-wire cryoelectric memory cells and the hybrid AB system organization that utilizes coincident-current selection are examined from the standpoint of batch fabrication requirements, redundancy, electrical parameters, tolerances, and noise immunity. These advances, demonstrated with experimental sub-systems, are described in relation to previous work, and are shown to place cryoelectrics as a strong contender for achieving systems with capacities of more than 108 bits.