Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers

Author

Dutta, N.K. ; Lopata, J. ; Berger, P.R. ; Sivco, D.L. ; Cho, A.V.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

27

Issue

8

fYear

1991

fDate

4/11/1991 12:00:00 AM

Firstpage

680

Lastpage

682

Abstract

The fabrication and performance characteristics of ridge-waveguide GaInAs/GaAs quantum-well lasers with large optical cavity (LOC) designs are reported. As expected, lasers with very large optical cavity have narrow far-field width (22 degrees ) perpendicular to the junction. However, due to small confinement factor, they also have higher threshold current (36 mA). The LOC design has been optimised to produce lasers with low threshold current (12 mA), high efficiency (0.45 mW/mA/facet) and narrow far field divergence (32 degrees *12 degrees ). These lasers operate in the fundamental transverse mode to output powers of 130 mW/facet.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical waveguides; semiconductor junction lasers; 130 mW; 36 mA; GaInAs-GaAs; confinement factor; fabrication; far-field width; fundamental transverse mode; high efficiency; large optical cavity; narrow far field divergence; performance characteristics; quantum well lasers; ridge-waveguide; semiconductor lasers; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910425

Filename

83306