DocumentCode :
1320239
Title :
Modulating the Magneto-Crystalline Anisotropy and the Exchange Bias Field in CoFe/(Co,Fe)O Bilayers Using Ion-Beam Bombardment and Single Crystalline Substrates
Author :
Shueh, C. ; Cortie, D.L. ; Klose, F. ; van Lierop, J. ; Lin, K.-W.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Volume :
48
Issue :
11
fYear :
2012
Firstpage :
2892
Lastpage :
2895
Abstract :
We report the effects of ion-beam bombardment on the room temperature and low temperature magnetic properties of ferromagnetic CoFe/antiferromagnetic (Co,Fe)O thin film bilayers. The films were deposited onto amorphous SiO2 and single crystalline MgO (110)/(100) substrates. Magnetometry showed that ion-beam bombardment was capable of modifying the coercivity and loop shape for the thin film system at room temperature, corresponding to alteration of the effective magneto-crystalline anisotropy field. After field cooling to 50 K, a shifted hysteresis loop was seen for those films containing a proportion of the antiferromagnetic rock-salt (Co,Fe)O phase, with an exchange bias magnitude that depended on the ion-beam bombardment conditions. Our results indicate that matching the substrate with appropriate ion-bombardment conditions provides a promising way to engineer selectively two important types of magnetic anisotropy in ferromagnetic/antiferromagnetic bilayers: magneto-crystalline and exchange bias.
Keywords :
antiferromagnetic materials; cobalt alloys; cobalt compounds; coercive force; ferromagnetic materials; interface magnetism; ion beam assisted deposition; iron alloys; iron compounds; magnetic anisotropy; magnetic hysteresis; magnetic thin films; CoFe-CoFeO; MgO; MgO (110)-(100) substrate; SiO2; coercivity; deposition; exchange bias field; ferromagnetic-antiferromagnetic thin film bilayers; field cooling; hysteresis loop; ion-beam bombardment; low temperature magnetic properties; magnetocrystalline anisotropy field; magnetometry; single crystalline substrates; temperature 293 K to 298 K; Amorphous magnetic materials; Magnetic hysteresis; Magnetic properties; Magnetometers; Perpendicular magnetic anisotropy; Substrates; Exchange bias; ion-beam modification;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2012.2201144
Filename :
6332597
Link To Document :
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