DocumentCode
1320560
Title
Majority Gate for Nanomagnetic Logic With Perpendicular Magnetic Anisotropy
Author
Breitkreutz, Stephan ; Kiermaier, Josef ; Eichwald, Irina ; Ju, Xueming ; Csaba, Gyorgy ; Schmitt-Landsiedel, Doris ; Becherer, Markus
Author_Institution
Lehrstuhl fur Tech. Elektron., Tech. Univ. Munchen, Munich, Germany
Volume
48
Issue
11
fYear
2012
Firstpage
4336
Lastpage
4339
Abstract
A majority gate for nanomagnetic logic with perpendicular magnetic anisotropy is presented. A novel technique of local focused ion beam irradiation generating artificial domain wall nucleation centers is used to enable directed signal flow and logic computation in an array of field-coupled nanomagnets. The switching behavior of the majority gate is characterized and logic operation is experimentally proven using magneto-optical and magnetic force microscopy. The findings are supported by numerical and micromagnetic simulations. Tolerance margins for fabrication and computing frequencies for correct operation are explored. The presented majority gate allows for complex, non-volatile logic with synchronous global clocking at room-temperature.
Keywords
digital storage; ion beam applications; logic circuits; magnetic force microscopy; nanomagnetics; artificial domain wall nucleation centers; directed signal flow; fabrication; field-coupled nanomagnets; local focused ion beam irradiation; logic computation; magnetic force microscopy; magneto-optical force microscopy; majority gate; nanomagnetic logic; perpendicular magnetic anisotropy; switching behavior; Clocks; Couplings; Logic gates; Magnetic multilayers; Magnetic switching; Perpendicular magnetic anisotropy; Switches; Domain wall (DW) nucleation; focused ion beam (FIB) irradiation; majority gate; nanomagnetic logic (NML); perpendicular magnetic anisotropy (PMA);
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2012.2197184
Filename
6332650
Link To Document