Title :
Numerical Investigation of Magnetic Resonant Coupling Technique in Inter-Chip Communication via Electromagnetics-TCAD Coupled Simulation
Author :
Chen, Quan ; Ho, S.L. ; Fu, W.N.
Author_Institution :
Dept. of Electr. Eng., Hong Kong Polytech. Univ., Hong Kong, China
Abstract :
Wireless power transfer based on magnetic resonant coupling (MRC) has attracted extensive studies for its applications in macroscopic engineering. In this work, we explore one potential application of MRC in microelectronics, i.e., as an enhancement of inductive coupling for wireless inter-chip communication. Theoretical analysis and numerical simulation are conducted to study the advantages of MRC in power transfer efficiency. In particular, a new EM-semiconductor simulator is employed to provide a faithful description for the interactions between magnetic fields and semiconductor carrier transport.
Keywords :
digital simulation; electromagnetic field theory; electronic engineering computing; inductive power transmission; numerical analysis; technology CAD (electronics); EM-semiconductor simulator; MRC technique; electromagnetic-TCAD coupled simulation; inductive coupling enhancement; macroscopic engineering; magnetic fields; magnetic resonant coupling technique; microelectronics; numerical investigation; power transfer efficiency; semiconductor carrier transport; wireless interchip communication; wireless power transfer; Bandwidth; Coils; Couplings; Doping; Magnetic resonance; Substrates; Wireless communication; EM-TCAD simulation; inductive inter-chip communication; magnetic resonant coupling;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2012.2195300
