DocumentCode :
1320689
Title :
Strain Relaxation in Atomic Flat SrRu 
O 
/SrTiO <
Author :
Bohra, Murtaza ; Yeh, H.J. ; Wu, C.P. ; Chou, Hsiung
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume :
48
Issue :
11
fYear :
2012
Firstpage :
4566
Lastpage :
4569
Abstract :
Strain-relaxed atomically flat SrRu1-xO3 layers can be grown on SrTiO3 substrate by a standard off-axis RF sputtering technique without using buffer layers. High RF power generated a high concentration of Ru vacancies proportional to the enlarged unit cell volume. The strong interface strain is relaxed by nano-crystal-defects induced by the large Ru vacancies and thin amorphous layer sitting in between film-substrate interface. Because of the structural defects and large unit cell expansion, the TC is lowered to 110-137 K as compared to bulk value of 161 K. Strong uniaxial anisotropy along [001] direction indicates that the intrinsic bulk SrRuO3 anisotropy dominating over the lattice expansion induced cubic anisotropy.
Keywords :
amorphous state; magnetic anisotropy; magnetic thin films; nanostructured materials; sputter deposition; strontium compounds; vacancies (crystal); RF power; SrRu1-xO3; SrTiO3; atomic flat layers; buffer layers; film-substrate interface; interface strain; lattice expansion; nanocrystal-defects; off-axis RF-sputtering; strain relaxation; structural defects; temperature 110 K to 137 K; temperature 161 K; thin amorphous layer; uniaxial anisotropy; unit cell expansion; vacancies; Lattices; Rough surfaces; Strain; Substrates; Surface morphology; Surface roughness; Surface treatment; Atomic flat structures; Ru-vacancies; SrRuO$_{3}$ $_{3}$
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2012.2200035
Filename :
6332670
Link To Document :
