Title :
Polarisation independent δ-strained InGaAs/InGaAsP quantum well waveguide modulator
Author :
Zhu, Y. ; Bartolo, R. ; Saini, S.S. ; Ren, T. ; Dagenais, M. ; Shen, H. ; Pamulapati, J. ; Zhou, W.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
1/20/2000 12:00:00 AM
Abstract :
A δ-strained InGaAs/InGaAsP MQW modulator has been fabricated and tested. The device shows fully polarisation independent transmission characteristics. Less than 0.80 dB polarisation sensitivity has been achieved for a wide range of wavelength. The extinction ratio is >20 dB at a reverse bias voltage of 3 V. Almost the same Stark energy shift for heavy holes and light holes has been demonstrated in this structure
Keywords :
quantum well devices; δ-strained InGaAs/InGaAsP quantum well waveguide modulator; 3 V; InGaAs-InGaAsP; Stark energy shift; extinction ratio; polarisation independent transmission; polarisation sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000191
