• DocumentCode
    1320867
  • Title

    Measurement and compensation of piezoresistive coefficient π44 for minority carrier concentration

  • Author

    Fruett, F. ; Meijer, G.C.M.

  • Author_Institution
    Electron. Res. Lab., Delft Univ. of Technol., Netherlands
  • Volume
    36
  • Issue
    2
  • fYear
    2000
  • fDate
    1/20/2000 12:00:00 AM
  • Firstpage
    173
  • Lastpage
    175
  • Abstract
    The piezoresistive coefficient π44 for holes in the base of a PNP lateral transistor characterises the main source of the stress induced changes in the saturation current in such a device. The authors show how this coefficient can be measured. Furthermore, it is shown that, when the common square or circular emitter geometry is applied, most of the piezojunction effect is inherently compensated for
  • Keywords
    bipolar transistors; PNP lateral transistor; minority carrier concentration; piezoresistive coefficient; saturation current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000150
  • Filename
    833169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1320867