DocumentCode :
1320867
Title :
Measurement and compensation of piezoresistive coefficient π44 for minority carrier concentration
Author :
Fruett, F. ; Meijer, G.C.M.
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Netherlands
Volume :
36
Issue :
2
fYear :
2000
fDate :
1/20/2000 12:00:00 AM
Firstpage :
173
Lastpage :
175
Abstract :
The piezoresistive coefficient π44 for holes in the base of a PNP lateral transistor characterises the main source of the stress induced changes in the saturation current in such a device. The authors show how this coefficient can be measured. Furthermore, it is shown that, when the common square or circular emitter geometry is applied, most of the piezojunction effect is inherently compensated for
Keywords :
bipolar transistors; PNP lateral transistor; minority carrier concentration; piezoresistive coefficient; saturation current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000150
Filename :
833169
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1320867
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