Title :
Measurement and compensation of piezoresistive coefficient π44 for minority carrier concentration
Author :
Fruett, F. ; Meijer, G.C.M.
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Netherlands
fDate :
1/20/2000 12:00:00 AM
Abstract :
The piezoresistive coefficient π44 for holes in the base of a PNP lateral transistor characterises the main source of the stress induced changes in the saturation current in such a device. The authors show how this coefficient can be measured. Furthermore, it is shown that, when the common square or circular emitter geometry is applied, most of the piezojunction effect is inherently compensated for
Keywords :
bipolar transistors; PNP lateral transistor; minority carrier concentration; piezoresistive coefficient; saturation current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000150