Title :
Microwave noise performance of AlGaN/GaN HEMTs
Author :
Ping, A.T. ; Piner, E. ; Redwing, J. ; Khan, M.Asif ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
1/20/2000 12:00:00 AM
Abstract :
The authors have characterised the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 μm gate-length devices was measured to be 0.77 dB at 5 GHz and 1.06 dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; 0.25 micron; 0.77 to 1.06 dB; 5 to 10 GHz; AlGaN-GaN; AlGaN/GaN HEMTs; SiC; epitaxial growth; insulating SiC substrates; low-noise applications; microwave noise performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000152
