Title :
Microwave potential of GaN-based Gunn devices
Author :
Alekseev, E. ; Pavlidis, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
1/20/2000 12:00:00 AM
Abstract :
Transient hydrodynamic simulations are used to carry out harmonic power analysis of GaN and GaAs Gunn diode oscillators. GaN-based devices are shown to have twice the frequency and a hundred times the power capability of GaAs Gunn diodes
Keywords :
Gunn diodes; Gunn oscillators; III-V semiconductors; gallium compounds; microwave diodes; microwave oscillators; semiconductor device models; wide band gap semiconductors; GaN; GaN-based Gunn devices; Gunn diode oscillators; harmonic power analysis; microwave potential; power capability; transient hydrodynamic simulations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000200
