DocumentCode
1321027
Title
Magnetic Properties and Magnetic Domain Structures Evolution Modulated by CoFeB Layer in [Pd/Co]/CoFeB/MgO/CoFeB/[Co/Pd] Perpendicular MTJ Films
Author
Yu, T. ; Naganuma, H. ; Shi, D.W. ; Ando, Y. ; Han, X.F.
Author_Institution
Beijing Nat. Lab. for Condensed Matter Phys., Inst. of Phys., Beijing, China
Volume
48
Issue
11
fYear
2012
Firstpage
2812
Lastpage
2815
Abstract
A series of MgO perpendicular magnetic tunneling junction (p-MTJ) films with soft/hard composite electrodes is prepared by RF-sputtering, where amorphous CoFeB is chosen as soft layer. The modulation of MTJs film magnetic properties on CoFeB thickness is investigated. The critical thickness for composite free layer transform from rigid magnet (RM) to exchange spring system (ES) is indentified. Besides, an unexpected in-plane exchange bias is observed which is attributed to the formation of closure domains. The evolution of domain structures on CoFeB is examined by magnetic force microscope. Coexistence of two distinguished magnetic domains of different sizes is observed. It is found that the evolution of domain morphology as varying CoFeB thickness is due to the modulation of effective anisotropy.
Keywords
amorphous magnetic materials; boron alloys; cobalt alloys; exchange interactions (electron); iron alloys; magnesium compounds; magnetic anisotropy; magnetic domains; magnetic thin films; magnetic tunnelling; palladium alloys; sputtering; MgO perpendicular magnetic tunneling junction; Pd-Co-CoFeB-MgO-CoFeB-Co-Pd; RF-sputtering; amorphous CoFeB layer; composite free layer transform; critical thickness; domain morphology; effective anisotropy; exchange spring system; magnetic domain structures; magnetic force microscope; magnetic properties; perpendicular MTJ films; rigid magnet; soft/hard composite electrodes; unexpected in-plane exchange bias; Anisotropic magnetoresistance; Magnetic domains; Magnetic multilayers; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Domain structure; exchange coupling; magnetic tunneling junction;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2012.2198795
Filename
6332729
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